| PART |
Description |
Maker |
| WME128K8-120DEI WME128K8-140DEI WME128K8-140DEIA W |
120ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796
140ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796
250ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796
300ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796
200ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796
150ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796
|
White Electronic Designs
|
| EDI8L24129V-BC EDI8L24129V12BI EDI8L24129V EDI8L24 |
10ns; 3.3V power supply; 128K x 24 SRAM
SRAM MCP
SDR Connector; No. of Contacts:26; Pitch Spacing:0.8mm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes
128K X 24 SRAM 3.3 VOLT 128K的X 24 SRAM.3
15ns; 3.3V power supply; 128K x 24 SRAM
|
Electronic Theatre Controls, Inc.
White Electronic Designs
|
| UNR2225 UNR2226 UNR2227 UN2225 UN2226 UN2227 |
Flash Memory IC; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-DIP; Supply Voltage Max:5.5V; Access Time, Tacc:120ns; Mounting
Silicon NPN epitaxial planar type
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| WF4M16-150DTM5 WF4M16-150DTM5A WF4M16-120DTM5 WF4M |
150ns; 5V power supply; 2M x 2M x 16 flash module
120ns; 5V power supply; 2M x 2M x 16 flash module
Flash MCP
2x2Mx16 5V Flash Module(2x2Mx16 5V闪速存储器模块) 2x2Mx16 5V的闪存模块（2x2Mx16 5V的闪速存储器模块
|
WEDC[White Electronic Designs Corporation]
Abracon, Corp.
|
| EDI88128C100CB EDI88128C EDI88128LP EDI88128P EDI8 |
70ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
128K X 8 STATIC RAM CMOS MONOLITHIC
CAPACITOR 150UF 200V ELECT TSHA
128KX8 MONOLITHIC SRAM, SMD 5962-89598 128KX8整体式的SRAM，贴962-89598
CAPACITOR 560UF 200V ELECT TSHA 128KX8整体式的SRAM，贴962-89598
CAPACITOR 680UF 200V ELECT TSHA 128KX8整体式的SRAM，贴962-89598
CAPACITOR 270UF 200V ELECT TSHA 128KX8整体式的SRAM，贴962-89598
CAPACITOR 1200UF 200V ELECT TSHA
100ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
85ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
|
White Electronic Designs
N.A.
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| IS61LV12816LL-12T IS61LV12816LL-12BI IS61LV12816LL |
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 12 ns, PQFP44
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 12 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
| IS61LV12816 IS61LV12816-10B IS61LV12816-10BI IS61L |
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 10 ns, PBGA48
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 10 ns, PDSO44
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 15 ns, PDSO44
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 15 ns, PBGA48
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 12 ns, PDSO44
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 15 ns, PQFP44
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 10 ns, PQFP44
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 12 ns, PQFP44
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution Inc]
Integrated Circuit Solution Inc
ISSI[Integrated Silicon Solution, Inc]
|
| UPD431000AGU-70LL-9JH UPD431000AGU-70LL-9KH UPD431 |
1M-bit (128K-word by 8-bit) CMOS static RAM, 70ns
1M-bit (128K-word by 8-bit) CMOS static RAM, 100ns
1M-bit (128K-word by 8-bit) CMOS static RAM, 120ns
1M-bit (128K-word by 8-bit) CMOS static RAM, 150ns
|
NEC
|
| AS7C33128NTF32_36B AS7C33128NTF36B-80TQIN AS7C3312 |
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 8 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 32 ZBT SRAM, 7.5 ns, PQFP100
Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection 128K X 36 ZBT SRAM, 10 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 10 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 7.5 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 32 ZBT SRAM, 10 ns, PQFP100
LM194/LM394 Supermatch Pair; Package: TO-99; No of Pins: 6; Qty per Container: 500; Container: Box 128K X 36 ZBT SRAM, 7.5 ns, PQFP100
LM195/LM395 Ultra Reliable Power Transistors; Package: TO-220; No of Pins: 3; Qty per Container: 45; Container: Rail
LM392 Low Power Operational Amplifier/Voltage Comparator; Package: SOIC NARROW; No of Pins: 8; Qty per Container: 95; Container: Rail
3.3V 128K × 32/36 Flowthrough Synchronous SRAM with NTDTM
LM3916 Dot/Bar Display Driver; Package: MDIP; No of Pins: 18; Qty per Container: 20; Container: Rail
LM392 Low Power Operational Amplifier/Voltage Comparator; Package: MDIP; No of Pins: 8; Qty per Container: 40; Container: Rail
NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| CY62137CVSL-70BVI CY62137CV CY62137CV25 CY62137CV2 |
Very high speed: 55 ns and 70 ns
(CY62137CV25 / CY62137CV30 / CY62137CV33) 2M (128K x 16) Static RAM
32-Bit Transparent D-Type Latch with 3-State Outputs 96-LFBGA -40 to 85
2M (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 55 ns, PBGA48
2M (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 70 ns, PBGA48
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| KM68FS1000 KM68FR1000 |
128K x8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 8位超低功耗和低电压CMOS 静RAM) 128K的x8位超低功耗和低电压的CMOS全静态RAM28K的8位超低功耗和低电压的CMOS静态RAM）的
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
